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Symposium G-5
Synthesis and Applications of Phase Transition Oxide Films

Scope

Phase transition (PT) oxide films such as VO2, NbO2 and SmNiO3, are intensively studied, recently. Variety of applications of PT oxide films has been explored in fields of optical, electrical and mechanical engineering, based on the large resistance change, so-called insulator-metal transition (IMT). In this symposium, studies on synthesis and applications of PT oxide films are widely invited. Fundamental studies on physical mechanisms of PT and IMT are also welcomed.

Topics

  • Synthesis and characterization of PT oxide films.
  • Optical applications of PT oxide films such as infrared light switching in Si-wave guide for optoelectronics and smart windows.
  • Electrical applications of PT oxide films such as memory, threshold switching, and self-sustained oscillation phenomena.
  • Various sensor applications of PT oxide films.
  • Non-oxide phase change compounds such as Ge2Sb2Te5.

Symposium Keynote

Hidekazu TanakaOsaka University
Hydrogen induced Quantum Phase Transition in Transition Metal Oxide Thin Films

Invited Speakers

  • Hiroshi KUMIGASHIRA, IMRAM, Tohoku University: Control of Metal-Insulator Transition using Resonant Tunneling in Oxide Double Quantum-Well Structures
  • Takeaki Yajima, Kyushu University: VO2 for Future Electronics: from Mott Transistors to Thermal A/D Converters

Organizers

Representative
Kunio Okimura
Tokai University
Correspondence
Kunio Okimura
Tokai University
okimura[at]tokai.ac.jp
Tetsuhide Shimizu
Tokyo Metropolitan University
Toshihiro Nakanishi
Kyoto University
Tomohiko Nakajima
National Institute of Advanced Industrial Science and Technology (AIST)
Yuji Muraoka
Okayama University
Md. Suruz Mian
Tokai University
Stephanos Konstantinidis
University of Mons
Jiri Houska
University of West Bohemia

Symposium Sponsors

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