Symposium G-4
Inorganic Thin Films for Sustainable Applications: From Material Design to Devices
Scope
Semiconducting inorganic thin films are the foundation of modern electronic devices, powering everything from CPUs and memory to cutting-edge sensors. As the demand for eco-friendly and smart technologies grows, the need for sustainable thin film devices has never been more critical. This symposium aims to drive innovation and foster collaboration, propelling advancements in thin film technology that are essential for the next generation of smart and sustainable devices. Join us as we explore the entire spectrum of thin-film research — from pioneering material design to breakthrough deposition techniques and transformative device applications. Inorganic thin films, with their inherently multidisciplinary nature, offer a wealth of opportunities for discovering new materials and accelerating device innovation. This symposium will provide a platform to connect diverse ideas, approaches, and perspectives, all essential to revolutionizing material science and technology. Symposium highlights: Material innovation — Discover the latest breakthrough in designing and discovering a wide range of inorganic materials, such as oxides, nitrides, metal chalcogenides, and 2D materials. Explore insights from experimental, theoretical (chemical/physical), and computational perspectives including machine learning and AI-based materials discovery. Thin film synthesis — Learn about cutting-edge thin-film deposition techniques, from solution-based wet processes to advanced vapor-phase methods like sputtering, PLD, and ALD. These innovative approaches are revolutionizing the way we synthesize and manipulate thin films. Advanced Characterization — Gain insights into the latest advancements in characterization methods, enabling researchers to unlock new functionalities and accelerate the pace of materials discovery Device Applications — Explore how thin films are transforming functional devices, from thin-film transistors (TFTs) and energy storage systems to next-generation power electronics and photo-splitting devices. Thin-film technology at the nanoscale is driving breakthroughs in surface and interface properties, leading to new possibilities in device performance. This symposium will be a hub of knowledge, inspiration, and collaboration, bringing together leading scientists and engineers from diverse fields. Whether you're focused on material discovery, film deposition, or innovative device applications, this event offers a unique opportunity to spark new ideas and partnerships that can shape the future of thin-film technology. We invite you to join us in this symposium building a sustainable, smart society through cutting-edge thin-film research.
Topics
- Functional oxides and non-oxide semiconducting materials in the various form of thin film including heterostructure, nano-particle, and composite film
- Functional ferroelectric, ferromagnetic, and piezoelectric materials
- Computation-based materials discovery, such as high-throughput and machine learning approaches
- Emerging materials such as metal chalcogenides, 2D materials, power semiconductors (SiC, GaN, Ga2O3, and Diamond, etc.)
- Optical materials
- Advanced characterization techniques for electrical, optical and thermal properties of thin film, including in situ and operando methods.
- Functional design of thin film using engineering methods such as composite, hybrid and multi-layer structures, e.g. low-E glass
- Thin film synthesis or fabrication such as sputtering, ALD, atmospheric plasma deposition, and novel deposition methods (high-throughput deposition approaches, combinatorial thin film deposition, multi-step film engineering, etc.)
- Thin film applications, such as transistors, memories, batteries, supercapacitors, solar cells, energy harvesting, photo-splitting, hydrogen, energy efficiency and so on, for renewable energy technologies, power electronics and emerging electronics, etc.
Symposium Keynote
- Masataka HigashiwakiOsaka Metropolitan Univ., National Institute of Information and Communications Technology
- Current status of gallium oxide material and device technologies
- Julia E MedvedevaMissouri University of Science and Technology
- Elucidating Hydrogen Behavior in Amorphous Oxides and their Interfaces
- Marius GrundmannUniversität Leipzig
- The alpha-phase of ultrawide gap gallium oxide: Epitaxy, doping and device properties
- Geoffroy HautierRice University
- High-throughput computational design of new materials for opto-electronics and quantum applications including point defects
- Toshio KamiyaInstitute of Science Tokyo
- Simulations and data science in semiconductor technology
Invited Speakers
- Jaroslav Vlcek, University of West Bohemia in Pilsen: Design and Scalable Deposition of Thermochromic VO2-Based Coatings for Energy-Saving Smart Windows
- Daichi Oka, Tokyo Metropolitan University: Epitaxial synthesis of Bismuth-based mixed anion compounds via atmospheric solution routes
- Shijie Wang, Agency for Science, Technology and Research (A*STAR): High entropy fluorite oxide thin films for sustainable applications
- Issei Suzuki, Tohoku Univ.: Novel Low-Temperature Deposition of Diverse Sulfides via Sulfur Plasma
- Xuedong Bai, Institute of Physics, Chinese Academy of Sciences: Epitaxial Growth of Single-Crystal Boron Nitride Thin Film
- Soon-Ku Hong, CHUNGNAM NATIONAL UNIVERSITY: Revisiting and Insight into the Stacking Faults in 4H-SiC for Power Devices
- Tetsuhide Shimizu, Tokyo Metropolitan University: The Impact of Highly Ionized Metal Flux in HiPIMS- Towards the Low Temperature Growth of Functional Nitrides -
- Zewen Xiao, Huazhong University of Science and Technology: Electronic Structure, Defect Properties, and Electrical Behavior of Tellurium Dioxide Polymorphs: The Challenge of p-Type Doping
- Naoomi Yamada, Chubu Univ.: Developments of Ternary Cu-M-I (M = Zn, Bi) Compounds with Antibonding Valence Band Maximum
- Lucas Caretta, Brown University: Low energy domain wall racetracks with multiferroic topologies
- Pungkeun Song, Pusan National University: Preparation and performance of wide gap semiconductor for TFTs , SAW device , and TE materials
- Shang-Peng Gao, Fudan University: Electronic States, Excitation Spectroscopy and Transport Properties in Layered and 2D Semiconductors
- Jin-Seong Park, Hanyang University: Atomically Engineered Oxide Semiconductors via ALD for Emerging Thin-Film Electronics
Organizers
- Representative
Naho Itagaki - Kyushu University, Japan
- Correspondence
Junjun Jia - Waseda University, Japan
jia[at]aoni.waseda.jp
- Andriy Zakutayev
- NREL, USA
- Andreas Klein
- Technical University of Darmstadt, Germany
- Hiroshi Yanagi
- University of Yamanashi, Japan
- Shijie Wang
- IMRE, A*STAR, Singapore
- Qun Zhang
- Fudan University, China
- Pung-kuen Song
- Pusan National University, Korea
- Nobuto Oka
- Kindai University, Japan
- Minseok Kim
- Aoyama Gakuin University, Japan
- Julia Medvedeva
- Missouri University of Science and Technology, USA
- Hui Ye
- Zhejiang University, China
- Geoffroy Hautier
- Dartmouth College, USA
- Holger Kersten
- Kiel University, Germany
- Jaroslav Vlcek
- University of West Bohemia, Czechia
- Marius Grundmann
- Leipzig University, Germany
- Yuzo Shigesato
- Aoyama Gakuin University, Japan



